• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a method for manufacturing a substrate (7) for radiofrequency device by assembling a piezoelectric layer (3) on a support substrate (1) via an electrically insulating layer, the piezoelectric layer ( 3) having a rough surface (30) at its interface with the electrically insulating layer, said method being characterized in that it comprises the following steps: - providing a piezoelectric substrate (3) having a rough surface (30) adapted to reflect a radio frequency wave, - the deposition of a dielectric layer (4) on the rough surface (30) of the piezoelectric substrate (3), - the provision of a support substrate (1), - the deposition of a photo-polymerizable adhesive layer (2) on the support substrate; - bonding of the piezoelectric substrate (3) to the support substrate (1) via the dielectric layer (4) and the adhesive layer (2), for form a assembled substrate (5), - irradiating the assembled substrate (5) with a luminous flux (6) for polymerizing the adhesive layer (2), said adhesive layer (2) and the dielectric layer (4) together forming the electrically bonded layer insulating.
    公开号:FR3079345A1
    申请号:FR1852574
    申请日:2018-03-26
    公开日:2019-09-27
    发明作者:Djamel Belhachemi；Thierry Barge
    申请人:Soitec SA；
    IPC主号:
    专利说明:

    METHOD FOR MANUFACTURING A SUBSTRATE FOR A RADIO FREQUENCY DEVICE
    FIELD OF THE INVENTION
    The present invention relates to a method of manufacturing a substrate for a radiofrequency device.
    BACKGROUND OF THE INVENTION
    It is known to manufacture a radiofrequency (RF) device, such as a resonator or filter, on a substrate comprising successively, from its base towards its surface, a support substrate, generally made of a semiconductor material such as silicon, a electrically insulating layer and a piezoelectric layer.
    Surface acoustic wave filters (SAW, acronym for the English term “Surface Acoustic Wave”) typically comprise a thick piezoelectric layer (that is to say a thickness generally of several tens of pm) and two electrodes under the shape of two interdigitated metal combs deposited on the surface of said piezoelectric layer. An electrical signal, typically a change in electrical voltage, applied to an electrode is converted into an elastic wave which propagates over the surface of the piezoelectric layer. The propagation of this elastic wave is favored if the frequency of the wave corresponds to the frequency band of the filter. This wave is again converted into an electrical signal when it reaches the other electrode.
    However, there are parasitic wave propagation modes which extend in the thickness of the piezoelectric layer and are likely to be reflected at the interface with the underlying support substrate. This phenomenon is called "rattle" in English.
    To avoid these parasitic modes, it is known to ensure that the surface of the piezoelectric layer situated at the interface with the electrically insulating layer is sufficiently rough to allow a reflection of the parasitic waves in all directions (dispersion effect) and to avoid their transmission in the substrate.
    Given the wavelength considered, the roughness of the surface of the piezoelectric layer is very high, of the order of a few μm.
    The manufacture of the substrate involves bonding the rough surface of the piezoelectric layer, possibly covered with the electrically insulating layer, on the support substrate.
    However, to ensure good adhesion between the piezoelectric layer and the support substrate despite such roughness, the current method requires a large number of successive steps, which make it long and expensive.
    Thus, a method could include the following steps:
    deposition of a layer of silicon oxide (SiO 2 ), by plasma-assisted chemical vapor deposition (PECVD) on the rough surface of the piezoelectric layer, over a thickness of approximately 2 μm,
    deposition of a first layer of SiO 2 on the surface of the piezoelectric layer opposite the rough surface, over a thickness of approximately 0.5 μm,
    - implementation of a first chemical mechanical polishing (CMP, acronym of the English term “Chemical Mechanical Polishing”) of the SiO 2 layer deposited on the rough surface; however, the roughness obtained following this polishing remains too high for a good quality bonding,
    deposition of a second layer of SiO 2 on the surface of the piezoelectric layer opposite the rough surface, over a thickness of approximately 0.5 μm,
    - implementation of a second chemical mechanical polishing (CMP, acronym of the English term “Chemical Mechanical Polishing”) of the SiO 2 layer deposited on the rough surface, until a roughness sufficient to allow bonding of good quality of the piezoelectric layer covered with the layer of SiO 2 , on the support substrate, said support substrate itself being covered with a layer of SiO 2 requiring chemical mechanical polishing (CMP, acronym of the English term " Chemical Mechanical Polishing ”).
    In addition to the cost induced by the implementation of the above-mentioned steps on the support substrate side as well as on the piezoelectric layer side, this process has the drawback of generating a significant curvature of the substrate (“bow” according to English terminology), because the deposit layers of SiO 2 on the piezoelectric substrate is produced at high temperature. This curvature disrupts the operations then carried out on the substrate for the manufacture of the filter, which are adapted to flat substrates.
    BRIEF DESCRIPTION OF THE INVENTION
    An object of the invention is to remedy the aforementioned drawbacks and in particular to design a method for manufacturing a substrate for a radiofrequency device having a reduced cost and / or a curvature reduced compared to the method of the prior art.
    To this end, the invention provides a method of manufacturing a substrate for a radiofrequency device by assembling a piezoelectric layer on a support substrate by means of an electrically insulating layer, the piezoelectric layer having a rough surface at its interface with the electrically insulating layer, said method being mainly characterized in that it comprises the following steps:
    - the supply of a piezoelectric substrate having a rough surface suitable for reflecting a radiofrequency wave,
    - the deposition of a dielectric layer on the rough surface of the piezoelectric substrate,
    - the supply of a support substrate,
    - the deposition of a photo-polymerizable adhesive layer on the support substrate,
    - bonding of the piezoelectric substrate to the support substrate by means of the dielectric layer and the adhesive layer, to form an assembled substrate,
    - the irradiation of the assembled substrate with a light flux to polymerize the adhesive layer, said adhesive layer and the dielectric layer together forming the electrically insulating layer.
    By “rough surface” is meant in the present text a surface whose roughness is of the same order of magnitude as the wavelength of the RF waves intended to propagate in the piezoelectric layer of the filter, so as to allow the reflection of the waves. parasites on said surface. In the context of the present invention, the roughness of such a surface is between 1.5 and 2.2 pm RMS.
    The implementation of the bonding combining the adhesive layer and the dielectric layer makes it possible to dispense with the steps necessary for the formation of a sufficiently smooth SiO 2 layer on the rough surface, and to avoid the implementation of deposits with high temperature likely to cause a significant curvature of the substrate. Furthermore, the dielectric layer in contact with the piezoelectric layer allows the substrate to be given good acoustic performance.
    According to other aspects, the proposed process has the following different characteristics taken alone or according to their technically possible combinations:
    the dielectric layer comprises a layer of silicon oxide, a layer of silicon nitride, a layer comprising a combination of nitride and silicon oxide, and / or a superposition of at least one layer of oxide and a layer of silicon nitride deposited on the piezoelectric substrate by plasma assisted chemical vapor deposition;
    the dielectric layer is a layer of glass deposited by centrifugation on the piezoelectric substrate;
    the thickness of the photopolymerizable adhesive layer is between 2 μm and 8 μm;
    the deposition of the photo-polymerizable adhesive layer is carried out by centrifugal coating;
    the bonding step is carried out at a temperature between 20 and 50 ° C, preferably between 20 ° C and 30 ° C;
    the light flux is applied through the piezoelectric substrate; irradiation is carried out on an impulse basis;
    the luminous flux has a wavelength between 320 nm and 365 nm;
    the support substrate is made of a material having a coefficient of thermal expansion lower than that of the material constituting the piezoelectric substrate;
    the support substrate is made of silicon, sapphire, polycrystalline aluminum nitride (AIN), or gallium arsenide (GaAs);
    the method further comprises, after the polymerization of the adhesive layer, a step of thinning the piezoelectric substrate so as to transfer to the support substrate a piezoelectric layer of a determined thickness; the thinning step comprises etching and / or mechanochemical polishing;
    the method comprises, after the thinning step, the implementation of a smoothing annealing of the piezoelectric layer;
    each step after bonding is carried out at a temperature less than or equal to 300 ° C;
    Another object of the invention relates to a process for manufacturing a radiofrequency filter, comprising:
    - the manufacture of a substrate by the previous manufacturing process,
    - the formation of a pair of interdigitated electrodes on the surface of the piezoelectric layer of said substrate.
    The invention also relates to a substrate for a radiofrequency device capable of being obtained by the method described above, successively comprising a support substrate, an electrically insulating layer and a piezoelectric layer having, at its interface with the electrically insulating layer, a rough surface suitable for reflecting a radiofrequency wave, the electrically insulating layer successively comprising, from the support substrate to the piezoelectric layer, a polymerized adhesive layer and a dielectric layer.
    Another object of the invention is a radiofrequency filter, comprising a substrate as described above and a pair of interdigitated electrodes extending over the surface of the piezoelectric layer.
    BRIEF DESCRIPTION OF THE DRAWINGS
    Other characteristics and advantages of the invention will emerge from the detailed description which follows, with reference to the attached drawings in which:
    Figure 1 schematically illustrates the step of depositing the photo-polymerizable adhesive layer on the support substrate;
    Figure 2 schematically illustrates the step of depositing the dielectric layer on the piezoelectric substrate;
    FIG. 3 schematically illustrates an assembled substrate obtained by bonding the support substrate to the piezoelectric substrate, with the adhesive layer and the dielectric layer located at the bonding interface;
    FIG. 4 schematically illustrates the step of polymerization of the adhesive layer after bonding of the piezoelectric substrate to the support substrate, so as to form a substrate for a radiofrequency device according to the invention;
    Figure 5 is a sectional view of the substrate for radio frequency device after thinning of the piezoelectric substrate;
    Figure 6 is a schematic illustration of a surface acoustic wave filter according to an embodiment of the invention.
    For reasons of readability of the figures, the elements illustrated are not necessarily shown to scale. Furthermore, the elements designated by the same reference signs in different figures are identical or fulfill the same function.
    DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION
    A first object of the invention relates to a method of manufacturing a substrate for a radiofrequency device, called the final substrate, by assembling, by bonding, a piezoelectric layer on a support substrate.
    The support substrate 1 is made of a material having a coefficient of thermal expansion lower than that of the material constituting the piezoelectric substrate 3. Thus, the support substrate plays the role of a stiffener which limits the expansion of the piezoelectric substrate during temperature variations to which it is subjected, which makes it possible to reduce the thermal coefficient of frequency of the piezoelectric substrate, that is to say the extent to which the frequency of a wave propagating in the piezoelectric substrate varies as a function of the temperature. Suitable materials are, for example, silicon, sapphire, polycrystalline aluminum nitride (AIN), or even gallium arsenide (GaAs). Silicon is particularly preferred because it allows the implementation of the method in microelectronics production lines which are adapted to silicon.
    In the present invention, we are interested in the coefficient of thermal expansion in a plane parallel to the main surface of the substrates.
    According to a first step shown in FIG. 1, a photopolymerizable adhesive layer 2 is deposited on an exposed face of the support substrate 1.
    The deposition of the photo-polymerizable adhesive layer is advantageously carried out by centrifugal coating, or "spin coating" in English terminology. This technique consists in rotating the substrate on which the deposition of the photo-polymerizable layer is provided on itself at a substantially constant and relatively high speed, in order to spread said photo-polymerizable layer uniformly over the whole of the surface of the substrate by centrifugal force. To this end, the substrate is typically placed and maintained by drawing a vacuum on a turntable.
    A person skilled in the art is able to determine the operating conditions, such as the volume of adhesive deposited on the surface of the substrate, the speed of rotation of the substrate, and the minimum duration of the deposit as a function of the thickness desired for the adhesive layer.
    The thickness of the photopolymerizable adhesive layer 2 is typically between 2 μm (micrometers) and 8 μm.
    According to a nonlimiting example, the photopolymerizable adhesive layer sold under the reference "NOA 61" by the company NORLAND PRODUCTS can be used in the present invention.
    According to a second step, a dielectric layer 4 is formed on a rough main face 30 of the piezoelectric substrate 3. FIG. 2 represents the piezoelectric substrate 3 on which a dielectric layer 4 has been deposited. It will be understood that this second step can be carried out beforehand , parallel to, or later on, the first step of depositing the photo-polymerizable adhesive layer.
    According to one embodiment, the dielectric layer 4 is a layer of silicon oxide, or a layer of silicon nitride, or a layer comprising a combination of nitride and silicon oxide, or a superposition of at least one oxide layer and a layer of silicon nitride. For example, one could form a layer of silicon oxide SiO 2 , or a layer of nitride Si 3 N 4 , a layer comprising a combination of nitride and oxide SiOxNy, or a superposition of a layer of oxide SiO 2 and a layer of nitride Si 3 N 4 . These materials are in fact conventionally used in radiofrequency devices to guide surface acoustic waves, in particular in the form of a stack of SiO 2 / Si 3 N 4 . The layer or layers of silicon oxide and / or nitride are preferably deposited by plasma-assisted chemical vapor deposition (PECVD).
    According to a preferred embodiment, the dielectric layer 4 is a layer of glass deposited by centrifugation on the piezoelectric substrate, called "spin-on glass" (SOG) according to English terminology. This technique is advantageous in that the deposition of the layer is carried out at ambient temperature, and is followed by densification annealing at a temperature of approximately 250 ° C., and therefore does not cause deformation of the substrate on which the dielectric layer is formed.
    An oxide or SOG type dielectric layer makes it possible to maintain the acoustic performance of a radiofrequency device obtained subsequently from the piezoelectric substrate at an optimal level.
    Preferably, such a dielectric oxide or SOG type layer having a smoothing effect is chosen, that is to say that its free surface does not conform to the rough surface of the piezoelectric substrate but is substantially smooth or at least has a roughness much lower than that of the piezoelectric substrate. Thus, the free surface of the dielectric layer is sufficiently smooth to allow good quality bonding on the support substrate.
    The piezoelectric substrate 3 is then bonded to the support substrate 1 via the dielectric layer 4 and the adhesive layer 2, in order to form an assembled substrate 5, an embodiment of which is shown in FIG. 3.
    The assembled substrate 5 is thus formed by the superposition of the support substrate 1, the adhesive layer 2, the dielectric layer 4, and the piezoelectric substrate 3, the adhesive layer 2 and the dielectric layer 4 being at the interface between the support substrate 1 and the piezoelectric substrate 3. The rough surface 30 of the piezoelectric layer 3 is thus at the interface of said piezoelectric layer 3 and of the dielectric layer 4, and is adapted to reflect a radio frequency wave which travels in the piezoelectric layer.
    The bonding is preferably carried out at room temperature, that is to say approximately 20 ° C. It is however possible to carry out hot bonding at a temperature between 20 ° C and 50 ° C, and more preferably between 20 ° C and 30 ° C.
    In addition, the bonding step is advantageously carried out at low pressure, that is to say at a pressure less than or equal to 5 mTorr, which makes it possible to desorb the water from the surfaces forming the bonding interface, ie ie the surface of the adhesive layer and the rough surface of the piezoelectric substrate. Carrying out the vacuum bonding step further improves the desorption of water at the bonding interface.
    The use of the polymer layer 2 as a bonding layer makes it possible on the one hand to bond the piezoelectric substrate 3 with the support substrate 1 effectively, in particular because the surface 30 of the piezoelectric substrate is rough, and it is commonly accepted that a polymeric material sticks more easily to a slightly rough surface. On the other hand, the deposition of the adhesive layer 2, the assembly of the substrates 1 and 3, and the irradiation of the assembled substrate 5 are carried out more quickly and in a simplified manner compared with the techniques of the state of the art. art for which the successive deposition of layers of SiO 2 on the rough surface and on the surface opposite to the rough surface of the piezoelectric layer are long and tedious to implement.
    In addition, the proposed method has a greatly reduced cost, since the deposition and UV irradiation of the adhesive layer are much less costly than the successive SiO 2 depositions, and do not require the carrying out of chemical mechanical polishing (CMP) .
    Bonding by the proposed polymer layer also makes it possible to resolve another major problem occurring during successive depositions of layers of SiO 2 , namely the creation of a large unwanted curvature in the substrate, which hinders the manufacture of radiofrequency devices from said layer. substrate, overcoming such deposits of SiO 2 . The method of the invention thus makes it possible to avoid, or at least reduce, the deformations of the piezoelectric substrate and of the support substrate during the deposition of the dielectric layer and of the adhesive layer respectively, as well as the final substrate obtained after bonding and irradiation.
    The assembled substrate 5 is then subjected to irradiation with a light flux 6, in order to polymerize the adhesive layer 2. The irradiation of the assembled substrate 5 is shown in FIG. 4.
    The light source is preferably a laser.
    The light radiation 5, or light flux, is preferably ultra-violet (UV) radiation. Depending on the composition of the adhesive layer 2, preferably UV radiation having a wavelength between 320 nm (nanometers) and 365 nm will be chosen.
    The irradiation is carried out by exposing the free face 31 of the piezoelectric substrate to the incident light radiation 6. Thus, the light radiation penetrates into the assembled substrate 5 from the free face 31 of the piezoelectric substrate 3, passes through the piezoelectric substrate, passes through the dielectric layer 4, until reaching the adhesive layer 2, thus causing the polymerization of said adhesive layer.
    The polymerization of the adhesive layer makes it possible to form a polymer layer 20 which ensures the mechanical cohesion of the assembled substrate, while keeping the support substrate 1 and the piezoelectric substrate 3 together, which form the final substrate 7.
    The irradiation of the assembled substrate 5 gives rise to a thermal process according to which the piezoelectric layer 3, traversed by the radiation, can partially absorb the energy of the radiation and heat up. Too much heating would destabilize the structure of the piezoelectric layer, which could lead to a degradation of the physical and chemical properties of the piezoelectric layer. In addition, excessive heating would cause deformation of the piezoelectric layer and of the support substrate due to their difference in coefficient of thermal expansion, leading to an overall deformation ("bow"), of the assembled substrate and therefore of the resulting final substrate.
    In order to avoid excessive heating of the piezoelectric layer 3, the irradiation is advantageously carried out in a pulsed manner, that is to say by exposing the assembled substrate to a plurality of pulses of light rays. Each pulse is produced during a determined irradiation time, which can be equal to or different from one pulse to another. The pulses are spaced over time by a determined rest time during which the assembled substrate is not exposed to light rays.
    Those skilled in the art are able to determine the irradiation time of each pulse, the rest time between each pulse, as well as the number of pulses to be made to completely polymerize the adhesive layer.
    Thus, for example, we can implement a dozen pulses for 10 seconds each, separated by rest times also for 10 seconds each.
    After irradiation, a final substrate is obtained consisting of the substrate assembled with a polymerized adhesive layer.
    The thickness of the polymerized adhesive layer 20 is preferably between pm (micrometers) and 8 pm. This thickness depends in particular on the material constituting the photopolymerizable adhesive layer deposited before bonding, on the thickness of said photopolymerizable adhesive layer, and on the experimental irradiation conditions.
    Optionally, one proceeds, after polymerization of the adhesive layer, to a thinning of the piezoelectric substrate 3, by removing material from the exposed face 31. This thinning step makes it possible to reduce the thickness of the piezoelectric layer and d 'thus obtaining, on the support substrate 1, a piezoelectric layer 3 of a determined thickness. The final substrate 7 having a thinned piezoelectric layer 3 is shown in FIG. 5. The thinning step can in particular be carried out by etching and / or by chemical mechanical polishing of the piezoelectric layer.
    After thinning, a smoothing annealing of the thinned piezoelectric layer is preferably carried out. Smoothing consists of a surface treatment aimed at making the exposed surface of the piezoelectric layer planar and reducing its roughness.
    The steps of the method which are subsequent to the bonding of the piezoelectric substrate to the support substrate 1 are carried out at a temperature less than or equal to 300 ° C., so as not to degrade their structure, in particular the structure of the adhesive layer 2, 20 or cause deformation of the substrates.
    A second object of the invention relates to a method of manufacturing a radiofrequency device, such as a resonator or a filter, from a final substrate obtained by the implementation of the manufacturing method described above according to the first object. of the invention, as well as such a radiofrequency device. The manufacture of such a radiofrequency device is indeed possible at a temperature not exceeding 300 ° C.
    Among the radio frequency devices that can be produced, the method described lends itself particularly to the manufacture of a surface acoustic wave filter. In the latter case, it is first a question of manufacturing the final substrate according to the preceding method, then of forming a pair of interdigitated electrodes on the surface of the piezoelectric layer of the final substrate.
    FIG. 6 is a view in principle of a surface acoustic wave filter 10 according to one embodiment, made from a final substrate 7 as described above. The filter comprises a piezoelectric layer 3 and two electrodes 11, 12 in the form of two interdigitated metal combs deposited on the surface 31 of said piezoelectric layer. On the side opposite to the electrodes, the piezoelectric layer 3 rests through its rough surface 30 on a dielectric layer 4, a polymerized adhesive layer 20, and a support substrate 1. The piezoelectric layer 3 is monocrystalline, excellent crystalline quality being effect necessary to avoid generating attenuation of the surface wave.
    Compared to bonding using a polymerized adhesive layer on the piezoelectric layer and the support substrate, the performance of such a surface acoustic wave filter is improved because the dielectric layer on the piezoelectric layer has a rough interface and impedance contrast. acoustic. An adhesive layer polymerized in contact with the piezoelectric layer would have significant negative influences on performance.
    权利要求:
    Claims (18)
    [1" id="c-fr-0001]
    1. Method for manufacturing a substrate (7) for a radiofrequency device by assembling a piezoelectric layer (3) on a support substrate (1) by means of an electrically insulating layer, the piezoelectric layer (3) having a rough surface (30) at its interface with the electrically insulating layer, said method being characterized in that it comprises the following steps:
    - the supply of a piezoelectric substrate (3) having a rough surface (30) adapted to reflect a radiofrequency wave,
    - the deposition of a dielectric layer (4) on the rough surface (30) of the piezoelectric substrate (3),
    - the supply of a support substrate (1),
    - the deposition of a photo-polymerizable adhesive layer (2) on the support substrate,
    - bonding of the piezoelectric substrate (3) on the support substrate (1) via the dielectric layer (4) and the adhesive layer (2), to form an assembled substrate (5),
    - the irradiation of the assembled substrate (5) by a light flux (6) to polymerize the adhesive layer (2), said adhesive layer (2) and the dielectric layer (4) together forming the electrically insulating layer.
    [2" id="c-fr-0002]
    2. Method according to claim 1, in which the dielectric layer (4) comprises a layer of silicon oxide, a layer of silicon nitride, a layer comprising a combination of nitride and silicon oxide, and / or a superposition of at least one oxide layer and a layer of silicon nitride deposited on the piezoelectric substrate (3) by chemical vapor deposition assisted by plasma.
    [3" id="c-fr-0003]
    3. Method according to claim 1, wherein the dielectric layer (4) is a layer of glass deposited by centrifugation on the piezoelectric substrate (3).
    [4" id="c-fr-0004]
    4. Method according to any one of the preceding claims, in which the thickness of the photopolymerizable adhesive layer (2) is between 2 pm and 8 pm.
    [5" id="c-fr-0005]
    5. Method according to any one of the preceding claims, in which the deposition of the photopolymerizable adhesive layer (2) is carried out by centrifugal coating.
    [6" id="c-fr-0006]
    6. Method according to any one of the preceding claims, in which the bonding step is carried out at a temperature between 20 and 50 ° C, preferably between 20 ° C and 30 ° C.
    [7" id="c-fr-0007]
    7. Method according to any one of the preceding claims, in which the light flux (6) is applied through the piezoelectric substrate (3).
    [8" id="c-fr-0008]
    8. Method according to any one of the preceding claims, in which the irradiation is carried out in an impulse manner.
    [9" id="c-fr-0009]
    9. Method according to any one of the preceding claims, in which the light flux (6) has a wavelength between 320 nm and 365 nm.
    [10" id="c-fr-0010]
    10. Method according to any one of the preceding claims, in which the support substrate (1) is made of a material having a coefficient of thermal expansion lower than that of the material constituting the piezoelectric substrate (3).
    [11" id="c-fr-0011]
    11. Method according to any one of the preceding claims, in which the support substrate (1) is made of silicon, sapphire, polycrystalline aluminum nitride (AIN), or gallium arsenide (GaAs).
    [12" id="c-fr-0012]
    12. Method according to any one of the preceding claims, further comprising, after the polymerization of the adhesive layer (2), a step of thinning the piezoelectric substrate (3) so as to transfer onto the support substrate (1) a piezoelectric layer (3) of a determined thickness.
    [13" id="c-fr-0013]
    13. The method of claim 12, wherein said step of thinning comprises etching and / or chemical mechanical polishing.
    [14" id="c-fr-0014]
    14. Method according to one of claims 12 or 13, comprising, after the thinning step, the implementation of a smoothing annealing of the piezoelectric layer.
    [15" id="c-fr-0015]
    15. Method according to any one of the preceding claims, in which each step subsequent to bonding is carried out at a temperature less than or equal to 300 ° C.
    [16" id="c-fr-0016]
    16. Method for manufacturing a radiofrequency filter (10), comprising:
    - the manufacture of a substrate (7) by the method according to any one of the preceding claims,
    - the formation of a pair of interdigitated electrodes (11, 12) on the surface (31) of the piezoelectric layer of said substrate.
    [17" id="c-fr-0017]
    17. Substrate (7) for a radiofrequency device capable of being obtained by the method according to one of claims 1 to 15, successively comprising a support substrate (1), an electrically insulating layer (2, 4) and a piezoelectric layer ( 3) having, at its interface with the electrically insulating layer, a rough surface
    10 (30) adapted to reflect a radiofrequency wave, the electrically insulating layer comprising successively, from the support substrate (1) to the piezoelectric layer (3), a polymerized adhesive layer (2) and a dielectric layer (4).
    [18" id="c-fr-0018]
    18. Radio frequency filter (10), comprising a substrate according to claim 17 and 15 a pair of interdigitated electrodes (11, 12) extending over the surface (31) of the piezoelectric layer (3).
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    同族专利:
    公开号 | 公开日
    EP3776632A1|2021-02-17|
    KR20200136427A|2020-12-07|
    US20210075389A1|2021-03-11|
    FR3079345B1|2020-02-21|
    SG11202009404SA|2020-10-29|
    WO2019186053A1|2019-10-03|
    JP2021519537A|2021-08-10|
    CN111919285A|2020-11-10|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US20060076584A1|2004-09-07|2006-04-13|Il-Doo Kim|Fabrication of electronic and photonic systems on flexible substrates by layer transfer method|
    FR3045678A1|2015-12-22|2017-06-23|Soitec Silicon On Insulator|METHOD FOR MANUFACTURING A MONOCRYSTALLINE PIEZOELECTRIC LAYER AND MICROELECTRONIC, PHOTONIC OR OPTICAL DEVICE COMPRISING SUCH A LAYER|
    FR3053532A1|2016-06-30|2018-01-05|Soitec|HYBRID STRUCTURE FOR ACOUSTIC SURFACE WAVE DEVICE|
    SG10201905013VA|2018-06-11|2020-01-30|Skyworks Solutions Inc|Acoustic wave device with spinel layer|
    FR3108788A1|2020-03-24|2021-10-01|Soitec|A method of manufacturing a piezoelectric structure for a radiofrequency device which can be used for the transfer of a piezoelectric layer, and a method of transferring such a piezoelectric layer|
    FR3108789A1|2020-03-24|2021-10-01|Soitec|A method of manufacturing a piezoelectric structure for a radiofrequency device which can be used for the transfer of a piezoelectric layer, and a method of transferring such a piezoelectric layer|
    法律状态:
    2019-02-19| PLFP| Fee payment|Year of fee payment: 2 |
    2019-09-27| PLSC| Publication of the preliminary search report|Effective date: 20190927 |
    2020-02-20| PLFP| Fee payment|Year of fee payment: 3 |
    2021-02-25| PLFP| Fee payment|Year of fee payment: 4 |
    2022-02-21| PLFP| Fee payment|Year of fee payment: 5 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1852574|2018-03-26|
    FR1852574A|FR3079345B1|2018-03-26|2018-03-26|METHOD FOR MANUFACTURING A SUBSTRATE FOR A RADIO FREQUENCY DEVICE|FR1852574A| FR3079345B1|2018-03-26|2018-03-26|METHOD FOR MANUFACTURING A SUBSTRATE FOR A RADIO FREQUENCY DEVICE|
    PCT/FR2019/050685| WO2019186053A1|2018-03-26|2019-03-26|Method for manufacturing a substrate for a radiofrequency device|
    JP2020551935A| JP2021519537A|2018-03-26|2019-03-26|Methods for Manufacturing Substrates for High Frequency Devices|
    EP19719549.8A| EP3776632A1|2018-03-26|2019-03-26|Method for manufacturing a substrate for a radiofrequency device|
    KR1020207029654A| KR20200136427A|2018-03-26|2019-03-26|Method for manufacturing a substrate for a radio frequency device|
    CN201980022402.2A| CN111919285A|2018-03-26|2019-03-26|Process for manufacturing a substrate for a radio frequency device|
    SG11202009404SA| SG11202009404SA|2018-03-26|2019-03-26|Method for manufacturing a substrate for a radiofrequency device|
    US17/041,367| US20210075389A1|2018-03-26|2019-03-26|Method for manufacturing a substrate for a radiofrequency device|
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